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| NEW PRODUCT NEW PRODUCT NEW PRODUCT BAS16D, BAS16WS SMALL SIGNAL DIODES .022 (0.55) SOD-123 (BAS16D) FEATURES Silicon Epitaxial Planar Diode Fast switching diode. Also available in case SOT-23 with designation BAS16. Cathode Mark .152 (3.85) .140 (3.55) .112 (2.85) .100 (2.55) Top View max. .004 (0.1) max. .053 (1.35) max. .006 (0.15) .067 (1.70) .055 (1.40) MECHANICAL DATA BAS16D Case: SOD-123 Plastic Case Weight: approx. 0.01 g Marking Code: A6 BAS16WS Case: SOD-323 Plastic Case Weight: approx. 0.004 g Marking Code: A6 min. .010 (0.25) .012 (0.3) .112 (2.85) .100 (2.55) .076 (1.95) .065 (1.65) Cathode Mark SOD-323 (BAS16WS) Top View max. .049 (1.25) max. .004 (0.1) min. .010 (0.25) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25C ambient temperature unless otherwise specified. max. .006 (0.15) .059 (1.5) .043 (1.1) SYMBOL VALUE UNIT Reverse Voltage Peak Reverse Voltage Forward Current (continuous) Non-Repetitive Peak Forward Current at t = 1s at t = 1ms at t = 1s Power Dissipation at Tamb = 25 C Maxium Junction Temperature Storage Temperature Range 1)Valid VR VRM IF IFSM IFSM IFSM BAS16D BAS16WS Ptot Tj TS 75 100 250 2.0 1.0 0.5 3501) 2001) 150 - 65 to +1501) V V mA A A A mW mW C C provided electrodes are kept at ambient temperture. 10/21/98 BAS16D, BAS16W ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA Leakage Current at VR = 25 V, Tj = 150 C at VR = 75 V at VR = 75 V, Tj = 150 C Capacitance at VR = 0; f = 1 MHz Reverse Recovery Time from IF = 10 mA to IR = 10 mA IR = 1 mA, RL = 100 Thermal Resistance Junction to Ambient Air 1)Valid Min. - - - - - - - - - Typ. - - - - - - - - - Max. 715 855 1.00 1.25 30 1 50 2 6 Unit mV mV V V A A A pF ns VF VF VF VF IR IR IR Ctot trr BAS16D BAS16WS RthJA - - 3751) 6501) C/W C/W provided that electrodes are kept at ambient temperature |
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